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| STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 m - 80A TO-220/DPAK/TO-247 FULLY PROTECTED MESH OVERLAYTM MOSFET Table 1: General Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 m < 9 m < 9 m ID 80 A 80 A 80 A 3 3 1 2 VDSS CLAMPED CLAMPED CLAMPED TYPICAL RDS(on) = 7 m 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175C MAXIMUM JUNCTION TEMPERATURE 1 TO-220 DPAK DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended. 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH SWITCHING CURRENT s LINEAR APPLICATIONS Table 2: Order Codes Sales Type STP130NS04ZB STB130NS04ZBT4 STW130NS04ZB Marking P130NS04ZB B130NS04ZB W130NS04ZB Package TO-220 DPAK TO-247 Packaging TUBE TAPE & REEL TUBE Rev. 2 February 2005 1/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 3: Absolute Maximum ratings Symbol VDS VDG VGS ID ID IDG IGS IDM ( ) PTOT VESD(G-S) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Gate Current (continuous) Gate Source Current (continuous) Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-Source ESD(HBM-C=100 pF, R=1.5 K) Max Operating Junction Temperature Storage Temperature Value CLAMPED CLAMPED CLAMPED 80 60 50 50 320 300 2.0 4 -55 to 175 Unit V V V A A mA mA A W W/C KV C ( ) Pulse width limited by safe operating area Table 4: Thermal Data TO-220 Rthj-case Rthj-pcb (*) Rthj-a Tl Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max Max -62.5 300 DPAK 0.50 35 --50 C TO-247 Unit C/W C/W (*)When mounted on 1 inch FR4 2oZ Cu Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 30 V) Max Value 80 500 Unit A mJ 2/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on) Parameter Clamped Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate-Source Breakdown Voltage Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 -40 < Tj < 175 C VDS = 16 V,Tj = 25 C VDS = 16 V,Tj = 125 C VGS = 10 V,Tj = 25 C IGS = 100 A VDS = VGS = ID = 1 mA VGS = 10 V ,ID = 40 A 18 2 7 4 9 Min. 33 10 100 10 Typ. Max. Unit V A A A V V m Table 7: Dynamic Symbol gfs Ciss Coss Crss td(on) tf td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Fall Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 40 A VDS = 25 V, f = 1MHz, VGS = 0 Min. Typ. 50 2700 1275 285 40 220 170 100 80 20 27 105 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 17.5 V, ID = 40 A, RG = 4.7 , VGS = 10 V (see Figure 15) VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 17) Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100A/s VDD = 25V, Tj = 150C (see Figure 16) 90 0.18 4 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns C A (1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Normalized On Resistance vs Temperature Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Source-drain Diode Forward Characteristics Figure 11: Capacitance Variations Figure 14: Normalized BVDSS vs Temperature 5/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Figure 15: Switching Times Test Circuit For Resistive Load Figure 17: Gate Charge Test Circuit Figure 16: Test Circuit For Diode Recovery Behaviour 6/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 7/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB TO-263 (D 2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b2 c c2 D D1 E e H L L1 L2 L4 V2 13.10 1.30 1.15 1.27 2.70 0 4.32 0.00 0.71 1.15 0.46 1.22 8.89 8.01 10.04 2.54 13.70 1.70 1.39 1.77 3.10 8 0.515 0.051 0.045 0.050 0.106 0 10.28 9.02 TYP MAX. 4.57 0.25 0.91 1.40 0.61 1.40 9.40 MIN. 0.178 0.00 0.028 0.045 0.018 0.048 0.350 0.315 0.395 0.010 0.540 0.067 0.054 0.069 0.122 8 0.404 0.355 TYP. MAX. 0.180 0.009 0.350 0.055 0.024 0.055 0.370 inch 8/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 9/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 10/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 9: Revision History Date 10-June-2004 14-Jan-2005 Revision 1 2 Description of Changes First Release. Inserted DPAK, Complete version. 11/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 |
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